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1. product pro?le 1.1 general description 75 w ldmos power transistor for base station applications at frequencies from 1800 mhz to 2000 mhz. 1.2 features n typical gsm edge performance at frequencies of 1930 mhz and 1990 mhz, a supply voltage of 28 v and an i dq of 550 ma: u average output power = 29.5 w u gain=19db u ef?ciency = 37.5 % u acpr 400k = - 61.5 dbc u acpr 600k = - 73 dbc u evm rms = 1.7 % n easy power control n integrated esd protection n excellent ruggedness n high ef?ciency n excellent thermal stability n designed for broadband operation (1800 mhz to 2000 mhz) n internally matched for ease of use n compliant to directive 2002/95/ec, regarding restriction of hazardous substances (rohs) blf6g20-75; BLF6G20LS-75 power ldmos transistor rev. 02 9 february 2009 product data sheet table 1. typical performance rf performance at t case = 25 c in a common source class-ab production test circuit. mode of operation f v ds p l(av) g p h d acpr 400k acpr 600k evm rms (mhz) (v) (w) (db) (%) (dbc) (dbc) (%) cw 1930 to 1990 28 63 19 52 - - - gsm edge 1930 to 1990 28 29.5 19 37.5 - 61.5 - 73 1.7 caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling.
blf6g20-75_BLF6G20LS-75_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 9 february 2009 2 of 12 nxp semiconductors blf6g20-75; BLF6G20LS-75 power ldmos transistor 1.3 applications n rf power ampli?ers for gsm, gsm edge, w-cdma and cdma base stations and multi carrier applications in the 1800 mhz to 2000 mhz frequency range 2. pinning information [1] connected to ?ange. 3. ordering information 4. limiting values table 2. pinning pin description simpli?ed outline graphic symbol blf6g20-75 (sot502a) 1 drain 2 gate 3 source [1] BLF6G20LS-75 (sot502b) 1 drain 2 gate 3 source [1] 3 2 1 sym112 1 3 2 3 2 1 sym112 1 3 2 table 3. ordering information type number package name description version blf6g20-75 - ?anged ldmost ceramic package; 2 mounting holes; 2 leads sot502a BLF6G20LS-75 - earless ?anged ldmost ceramic package; 2 leads sot502b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage - 0.5 +13 v i d drain current - 18 a t stg storage temperature - 65 +150 c t j junction temperature - 225 c
blf6g20-75_BLF6G20LS-75_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 9 february 2009 3 of 12 nxp semiconductors blf6g20-75; BLF6G20LS-75 power ldmos transistor 5. thermal characteristics 6. characteristics 7. application information 7.1 ruggedness in class-ab operation the blf6g20-75 and BLF6G20LS-75 are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds = 28 v; i dq = 550 ma; p l = 75 w (cw); f = 1990 mhz. table 5. thermal characteristics symbol parameter conditions type typ unit r th(j-case) thermal resistance from junction to case t case =80 c; p l = 29.5 w (cw) blf6g20-75 0.9 k/w BLF6G20LS-75 0.75 k/w table 6. characteristics t j = 25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 0.5 ma 65 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 100 ma 1.4 2 2.4 v v gsq gate-source quiescent voltage v ds = 28 v; i d = 600 ma 1.6 2.1 2.6 v i dss drain leakage current v gs =0v; v ds =28v - - 3 m a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v 14.9 18.5 - a i gss gate leakage current v gs =11v; v ds = 0 v - - 300 na g fs forward transconductance v ds =10v; i d =5a - 7 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d = 3.5 a - 0.15 0.235 w c rs feedback capacitance v gs =0v; v ds =28v; f = 1 mhz - 1.6 - pf table 7. application information mode of operation: gsm edge; f = 1930 mhz and 1990 mhz; rf performance at v ds = 28 v; i dq = 550 ma; t case = 25 c; unless otherwise speci?ed; in a class-ab production test circuit. symbol parameter conditions min typ max unit p l(av) average output power - 29.5 - w g p power gain p l(av) = 29.5 w 17.5 19 - db rl in input return loss p l(av) = 29.5 w - - 10 - 5.5 db h d drain ef?ciency p l(av) = 29.5 w 33.5 37.5 - % acpr 400k adjacent channel power ratio (400 khz) p l(av) = 29.5 w - - 61.5 - 59.5 dbc acpr 600k adjacent channel power ratio (600 khz) p l(av) = 29.5 w - - 73 - 69.5 dbc evm rms rms edge signal distortion error p l(av) = 29.5 w - 1.7 3 % evm m peak edge signal distortion error p l(av) = 29.5 w - 4.8 10 %
blf6g20-75_BLF6G20LS-75_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 9 february 2009 4 of 12 nxp semiconductors blf6g20-75; BLF6G20LS-75 power ldmos transistor 7.2 one-tone cw 7.3 two-tone cw v ds = 28 v; i dq = 550 ma; f = 1990 mhz. fig 1. one-tone cw power gain and drain ef?ciency as functions of load power; typical values p l (w) 0 100 80 40 60 20 001aah674 21 g p (db) 14 70 h d (%) 0 g p h d 10 20 30 40 50 60 15 16 17 18 19 20 v ds = 28 v; i dq = 550 ma; f 1 = 1989.95 mhz; f 2 = 1990.05 mhz. fig 2. two-tone cw power gain and drain ef?ciency as functions of peak envelope load power; typical values p l(pep) (w) 0 100 80 40 60 20 001aah675 21 g p (db) 14 70 h d (%) 0 g p h d 10 20 30 40 50 60 15 16 17 18 19 20
blf6g20-75_BLF6G20LS-75_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 9 february 2009 5 of 12 nxp semiconductors blf6g20-75; BLF6G20LS-75 power ldmos transistor 7.4 gsm-edge v ds = 28 v; i dq = 550 ma; f 1 = 1989.95 mhz; f 2 = 1900.05 mhz. v ds = 28 v; f 1 = 1989.95 mhz; f 2 = 1900.05 mhz. (1) 450 mhz (2) 500 mhz (3) 550 mhz (4) 600 mhz (5) 650 mhz fig 3. two-tone cw intermodulation distortion as function of peak envelope load power; typical values fig 4. third order intermodulation distortion as a function of peak envelope load power; typical values 001aah676 p l(pep) (w) 0 180 120 60 - 40 - 60 - 20 0 imd (dbc) - 80 imd5 imd3 imd7 001aah677 p l(pep) (w) 0 180 120 60 - 40 - 60 - 20 0 imd3 (dbc) - 80 (1) (2) (3) (4) (5) v ds = 28 v; i dq = 550 ma; f = 1990 mhz; t case =25 c. v ds = 28 v; i dq = 550 ma; f = 1990 mhz; t case =25 c. fig 5. gsm-edge power gain and drain ef?ciency as functions of average load power; typical values fig 6. gsm-edge acpr at 400 khz and at 600 khz as functions of average load power; typical values p l(av) (w) 080 60 20 40 001aah678 16 18 20 g p (db) 14 20 40 60 h d (%) 0 g p h d p l(av) (w) 080 60 20 40 001aah679 - 70 - 60 - 50 acpr (db) - 80 acpr 400k acpr 600k
blf6g20-75_BLF6G20LS-75_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 9 february 2009 6 of 12 nxp semiconductors blf6g20-75; BLF6G20LS-75 power ldmos transistor 8. test information v ds = 28 v; i dq = 550 ma; f = 1990 mhz; t case =25 c. v ds = 28 v; i dq = 550 ma; f = 1990 mhz; t case =25 c. fig 7. gsm edge rms evm and peak evm as functions of average load power; typical values fig 8. gsm edge acpr at 400 khz and rms evm as functions of drain ef?ciency; typical values p l(av) (w) 080 60 20 40 001aah680 8 12 4 16 20 evm m , evm rms (%) 0 evm m evm rms h d (%) 080 60 20 40 001aah681 - 60 - 64 - 56 - 52 acpr 400k (dbc) evm rms (%) - 68 4 2 6 8 0 acpr 400k evm rms see t ab le 8 for list of components. fig 9. test circuit for operation at 1990 mhz 001aaf236 v gg input 50 w output 50 w v dd c7 c4 r1 c5 c6 c13 c12 c3 c8 c9 c10 c11 c2 c1
blf6g20-75_BLF6G20LS-75_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 9 february 2009 7 of 12 nxp semiconductors blf6g20-75; BLF6G20LS-75 power ldmos transistor [1] american technical ceramics type 100b or capacitor of same quality. the striplines are on a double copper-clad taconic rf35 printed-circuit board (pcb) with e r = 3.5 and thickness = 0.76 mm. see t ab le 8 for list of components. fig 10. component layout for 1990 mhz test circuit 001aah673 testcircuit tb c7 c3 c2 c5 c4 c8 c9 c11 c12 c10 c6 r1 c1 c13 v gg v dd tb testcircuit outputboard inputboard + table 8. list of components (see figure 9 and figure 10 ) component description value remarks c1 multilayer ceramic chip capacitor 1 pf [1] c2, c11 gigahertz trimmer 0.6 pf to 4.5 pf temex at sm270 or equivalent c3, c6, c9 multilayer ceramic chip capacitor 12 pf [1] c4, c8, c10 multilayer ceramic chip capacitor 10 m f; 50 v tdk c5750x7r1h106m or equivalent c5 multilayer ceramic chip capacitor 1.5 m f; 50 v tdk c3225x7r1h155m or equivalent c7 tantalum capacitor 10 m f; 50 v kemet t491 series or equivalent c12 multilayer ceramic chip capacitor 12 pf [1] c13 electrolytic capacitor 220 m f; 50 v r1 philips chip resistor 5.6 w ; 1206
blf6g20-75_BLF6G20LS-75_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 9 february 2009 8 of 12 nxp semiconductors blf6g20-75; BLF6G20LS-75 power ldmos transistor 9. package outline fig 11. package outline sot502a references outline version european projection issue date iec jedec jeita sot502a 99-12-28 03-01-10 0 5 10 mm scale flanged ldmost ceramic package; 2 mounting holes; 2 leads sot502a p l a f b d u 2 h q c 1 3 2 d 1 e a c q u 1 c b e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c u 2 0.25 0.51 27.94 qw 2 w 1 f 1.14 0.89 u 1 34.16 33.91 l 5.33 4.32 p 3.38 3.12 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.01 0.02 1.100 0.045 0.035 1.345 1.335 0.210 0.170 0.133 0.123 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions) w 1 ab m m m
blf6g20-75_BLF6G20LS-75_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 9 february 2009 9 of 12 nxp semiconductors blf6g20-75; BLF6G20LS-75 power ldmos transistor fig 12. package outline sot502b references outline version european projection issue date iec jedec jeita sot502b 03-01-10 07-05-09 0 5 10 mm scale earless flanged ldmost ceramic package; 2 leads sot502b a f b d u 2 l h q c 1 3 2 d 1 e d u 1 d e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c u 2 0.25 w 2 f 1.14 0.89 u 1 20.70 20.45 l 5.33 4.32 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.010 0.045 0.035 0.815 0.805 0.210 0.170 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions)
blf6g20-75_BLF6G20LS-75_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 9 february 2009 10 of 12 nxp semiconductors blf6g20-75; BLF6G20LS-75 power ldmos transistor 10. abbreviations 11. revision history table 9. abbreviations acronym description cdma code division multiple access cw continuous wave edge enhanced data rates for gsm evolution evm error vector magnitude gsm global system for mobile communications ldmos laterally diffused metal-oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor rf radio frequency rms root mean square vswr voltage standing-wave ratio w-cdma wideband code division multiple access table 10. revision history document id release date data sheet status change notice supersedes blf6g20-75_BLF6G20LS-75_2 20090209 product data sheet - blf6g20-75_1 BLF6G20LS-75_1 modi?cations: ? the document now describes both the eared and earless version of this product: blf6g20-75 and BLF6G20LS-75 respectively ? t ab le 7 on page 3 : changed the minimum value for h d ? t ab le 7 on page 3 : changed the maximum value for evm rms ? t ab le 7 on page 3 : changed the maximum value for evm m blf6g20-75_1 20080306 preliminary data sheet - - BLF6G20LS-75_1 20080218 preliminary data sheet - -
blf6g20-75_BLF6G20LS-75_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 9 february 2009 11 of 12 nxp semiconductors blf6g20-75; BLF6G20LS-75 power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 12.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 12.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors blf6g20-75; BLF6G20LS-75 power ldmos transistor ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 9 february 2009 document identifier: blf6g20-75_BLF6G20LS-75_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation. . . . . . . . . . 3 7.2 one-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.3 two-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.4 gsm-edge . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 12.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 contact information. . . . . . . . . . . . . . . . . . . . . 11 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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